أعرض تسجيلة المادة بشكل مبسط
| dc.contributor |
Keszler, Douglas A |
|
| dc.contributor |
Wager, John F |
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| dc.contributor |
Lerner, Michael M |
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| dc.contributor |
Watson, Philip R |
|
| dc.date |
2007-07-24T16:25:38Z |
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| dc.date |
2007-07-24T16:25:38Z |
|
| dc.date |
2007-07-16 |
|
| dc.date |
2007-07-24T16:25:38Z |
|
| dc.date.accessioned |
2013-10-16T08:02:09Z |
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| dc.date.available |
2013-10-16T08:02:09Z |
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| dc.date.issued |
2013-10-16 |
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| dc.identifier |
http://hdl.handle.net/1957/6168 |
|
| dc.identifier.uri |
http://koha.mediu.edu.my:8181/xmlui/handle/1957/6168 |
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| dc.description |
Graduation date: 2008 |
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| dc.description |
The general emphasis of this work has been synthesis, characterization, and
applications of n- and p-type inorganic oxide thin films that are deposited from solutions.
In particular, a study of n-type transparent semiconductor films of tin (IV) oxide and
zinc-doped tin (IV) oxide has been performed by spin coating. Solution deposition of
antimony-doped to tin (IV) oxide films was also examined for the production of a
conductor.
The solution deposition of p-type cuprous oxide thin films has been achieved by
spin coating an aqueous precursor of copper (II) formate tetrahydrate (aq) and annealing
under nitrogen atmosphere. UV curing has also been used to prepare the films.
The solution deposition of silver films is performed with the aim of obtaining a
conductive contact for a TFT device. Silver metal films were deposited from solutions of
Ag₂O(s) in aqueous ammonia by spin coating method and annealing in air at
temperatures as low as 120°C. |
|
| dc.language |
en_US |
|
| dc.subject |
inorganic metal oxide |
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| dc.subject |
solution deposition of thin films |
|
| dc.title |
Solution deposition and characterization of the thin film inorganic materials |
|
| dc.type |
Thesis |
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الملفات في هذه المادة
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لا توجد أي ملفات مرتبطة بهذه المادة.
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هذه المادة تبدو في المجموعات التالية:
أعرض تسجيلة المادة بشكل مبسط