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Strained Silicon on Silicon by Wafer Bonding and Layer Transfer from Relaxed SiGe Buffer

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dc.creator Isaacson, David M.
dc.creator Taraschi, G.
dc.creator Pitera, Arthur J.
dc.creator Ariel, Nava
dc.creator Fitzgerald, Eugene A.
dc.creator Langdo, Thomas A.
dc.date 2004-12-10T14:27:11Z
dc.date 2004-12-10T14:27:11Z
dc.date 2005-01
dc.date.accessioned 2013-10-09T02:49:26Z
dc.date.available 2013-10-09T02:49:26Z
dc.date.issued 2013-10-09
dc.identifier http://hdl.handle.net/1721.1/7373
dc.identifier.uri http://koha.mediu.edu.my:8181/xmlui/handle/1721
dc.description We report the creation of strained silicon on silicon (SSOS) substrate technology. The method uses a relaxed SiGe buffer as a template for inducing tensile strain in a Si layer, which is then bonded to another Si handle wafer. The original Si wafer and the relaxed SiGe buffer are subsequently removed, thereby transferring a strained-Si layer directly to Si substrate without intermediate SiGe or oxide layers. Complete removal of Ge from the structure was confirmed by cross-sectional transmission electron microscopy as well as secondary ion mass spectrometry. A plan-view transmission electron microscopy study of the strained-Si/Si interface reveals that the lattice-mismatch between the layers is accommodated by an orthogonal array of edge dislocations. This misfit dislocation array, which forms upon bonding, is geometrically necessary and has an average spacing of approximately 40nm, in excellent agreement with established dislocation theory. To our knowledge, this is the first study of a chemically homogeneous, yet lattice-mismatched, interface.
dc.description Singapore-MIT Alliance (SMA)
dc.format 586563 bytes
dc.format application/pdf
dc.language en
dc.relation Advanced Materials for Micro- and Nano-Systems (AMMNS);
dc.subject layer transfer
dc.subject wafer bonding
dc.subject strained silicone
dc.subject SiGe graded buffer
dc.title Strained Silicon on Silicon by Wafer Bonding and Layer Transfer from Relaxed SiGe Buffer
dc.type Article

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