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Poly-Si₁â xGex Film Growth for Ni Germanosilicided Metal Gate

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dc.creator Yu, Hongpeng
dc.creator Pey, Kin Leong
dc.creator Choi, Wee Kiong
dc.creator Fitzgerald, Eugene A.
dc.creator Antoniadis, Dimitri A.
dc.date 2004-12-10T14:17:18Z
dc.date 2004-12-10T14:17:18Z
dc.date 2005-01
dc.date.accessioned 2013-10-09T02:49:26Z
dc.date.available 2013-10-09T02:49:26Z
dc.date.issued 2013-10-09
dc.identifier http://hdl.handle.net/1721.1/7371
dc.identifier.uri http://koha.mediu.edu.my:8181/xmlui/handle/1721
dc.description Scaling down of the CMOS technology requires thinner gate dielectric to maintain high performance. However, due to the depletion of poly-Si gate, it is difficult to reduce the gate thickness further especially for sub-65 nm CMOS generation. Fully silicidation metal gate (FUSI) is one of the most promising solutions. Furthermore, FUSI metal gate reduces gate-line sheet resistance, prevents boron penetration to channels, and has good process compatibility with high-k gate dielectric. Poly-SiGe gate technology is another solution because of its enhancement of boron activation and compatibility with the conventional CMOS process. Combination of these two technologies for the formation of fully germanosilicided metal gate makes the approach very attractive. In this paper, the deposition of undoped Poly-Si₁â xGex (0 < x < 30% ) films onto SiO₂ in a low pressure chemical vapor deposition (LPCVD) system is described. Detailed growth conditions and the characterization of the grown films are presented.
dc.description Singapore-MIT Alliance (SMA)
dc.format 13404 bytes
dc.format application/pdf
dc.language en
dc.relation Advanced Materials for Micro- and Nano-Systems (AMMNS);
dc.subject complementary metal oxide semiconductor
dc.subject nickel
dc.subject poly-SiGe
dc.subject poly-silicon germanium
dc.subject silica
dc.title Poly-Si₁â xGex Film Growth for Ni Germanosilicided Metal Gate
dc.title Poly-Si1-xGex Film Growth for Ni Germanosilicided Metal Gate
dc.type Article

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