Oblique Angle Deposition of Germanium Film on Silicon Substrate

dc.creator	Chew, Han Guan
dc.creator	Choi, Wee Kiong
dc.creator	Chim, Wai Kin
dc.creator	Fitzgerald, Eugene A.
dc.date	2004-12-10T14:08:26Z
dc.date	2004-12-10T14:08:26Z
dc.date	2005-01
dc.date.accessioned	2013-10-09T02:49:26Z
dc.date.available	2013-10-09T02:49:26Z
dc.date.issued	2013-10-09
dc.identifier	http://hdl.handle.net/1721.1/7370
dc.identifier.uri	http://koha.mediu.edu.my:8181/xmlui/handle/1721
dc.description	The effect of flux angle, substrate temperature and deposition rate on obliquely deposited germanium (Ge) films has been investigated. By carrying out deposition with the vapor flux inclined at 87° to the substrate normal at substrate temperatures of 250°C or 300°C, it may be possible to obtain isolated Ge nanowires. The Ge nanowires are crystalline as shown by Raman Spectroscopy.
dc.description	Singapore-MIT Alliance (SMA)
dc.format	1682300 bytes
dc.format	application/pdf
dc.language	en
dc.relation	Advanced Materials for Micro- and Nano-Systems (AMMNS);
dc.subject	Oblique angle deposition
dc.subject	Germanium nanowires
dc.title	Oblique Angle Deposition of Germanium Film on Silicon Substrate
dc.type	Article

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