| dc.creator |
Vajpeyi, Agam P. |
|
| dc.creator |
Chua, Soo-Jin |
|
| dc.creator |
Tripathy, S. |
|
| dc.creator |
Fitzgerald, Eugene A. |
|
| dc.date |
2004-12-10T14:02:52Z |
|
| dc.date |
2004-12-10T14:02:52Z |
|
| dc.date |
2005-01 |
|
| dc.date.accessioned |
2013-10-09T02:49:25Z |
|
| dc.date.available |
2013-10-09T02:49:25Z |
|
| dc.date.issued |
2013-10-09 |
|
| dc.identifier |
http://hdl.handle.net/1721.1/7368 |
|
| dc.identifier.uri |
http://koha.mediu.edu.my:8181/xmlui/handle/1721 |
|
| dc.description |
Nanoporous GaN films are prepared by UV assisted electrochemical etching using HF solution as an electrolyte. To assess the optical quality and morphology of these nanoporous films, micro-photoluminescence (PL), micro-Raman scattering, scanning electron microscopy (SEM), and atomic force microscopy (AFM) techniques have been employed. SEM and AFM measurements revealed an average pore size of about 85-90 nm with a transverse dimension of 70-75 nm. As compared to the as-grown GaN film, the porous layer exhibits a substantial photoluminescence intensity enhancement with a partial relaxation of compressive stress. Such a stress relaxation is further confirmed by the red shifted E₂(TO) phonon peak in the Raman spectrum of porous GaN. |
|
| dc.description |
Singapore-MIT Alliance (SMA) |
|
| dc.format |
2415487 bytes |
|
| dc.format |
application/pdf |
|
| dc.language |
en |
|
| dc.relation |
Advanced Materials for Micro- and Nano-Systems (AMMNS); |
|
| dc.subject |
gallium nitride |
|
| dc.subject |
porous semiconductors |
|
| dc.subject |
ultraviolet assisted electrochemical etching |
|
| dc.subject |
nanoporous GaN film |
|
| dc.title |
High Optical Quality Nanoporous GaN Prepared by Photoelectrochemical Etching |
|
| dc.type |
Article |
|