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High Optical Quality Nanoporous GaN Prepared by Photoelectrochemical Etching

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dc.creator Vajpeyi, Agam P.
dc.creator Chua, Soo-Jin
dc.creator Tripathy, S.
dc.creator Fitzgerald, Eugene A.
dc.date 2004-12-10T14:02:52Z
dc.date 2004-12-10T14:02:52Z
dc.date 2005-01
dc.date.accessioned 2013-10-09T02:49:25Z
dc.date.available 2013-10-09T02:49:25Z
dc.date.issued 2013-10-09
dc.identifier http://hdl.handle.net/1721.1/7368
dc.identifier.uri http://koha.mediu.edu.my:8181/xmlui/handle/1721
dc.description Nanoporous GaN films are prepared by UV assisted electrochemical etching using HF solution as an electrolyte. To assess the optical quality and morphology of these nanoporous films, micro-photoluminescence (PL), micro-Raman scattering, scanning electron microscopy (SEM), and atomic force microscopy (AFM) techniques have been employed. SEM and AFM measurements revealed an average pore size of about 85-90 nm with a transverse dimension of 70-75 nm. As compared to the as-grown GaN film, the porous layer exhibits a substantial photoluminescence intensity enhancement with a partial relaxation of compressive stress. Such a stress relaxation is further confirmed by the red shifted E₂(TO) phonon peak in the Raman spectrum of porous GaN.
dc.description Singapore-MIT Alliance (SMA)
dc.format 2415487 bytes
dc.format application/pdf
dc.language en
dc.relation Advanced Materials for Micro- and Nano-Systems (AMMNS);
dc.subject gallium nitride
dc.subject porous semiconductors
dc.subject ultraviolet assisted electrochemical etching
dc.subject nanoporous GaN film
dc.title High Optical Quality Nanoporous GaN Prepared by Photoelectrochemical Etching
dc.type Article

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