| dc.creator |
Lee, Minjoo L. |
|
| dc.creator |
Leitz, Christopher W. |
|
| dc.creator |
Cheng, Zhiyuan |
|
| dc.creator |
Antoniadis, Dimitri A. |
|
| dc.creator |
Fitzgerald, Eugene A. |
|
| dc.date |
2003-12-22T20:54:25Z |
|
| dc.date |
2003-12-22T20:54:25Z |
|
| dc.date |
2002-01 |
|
| dc.date.accessioned |
2013-10-09T02:33:28Z |
|
| dc.date.available |
2013-10-09T02:33:28Z |
|
| dc.date.issued |
2013-10-09 |
|
| dc.identifier |
http://hdl.handle.net/1721.1/3989 |
|
| dc.identifier.uri |
http://koha.mediu.edu.my:8181/xmlui/handle/1721 |
|
| dc.description |
We have fabricated strained Ge channel p-type metal-oxide-semiconductor field-effect transistors (p-MOSFETs) on Siâ .â Geâ .â virtual substrates. The poor interface between silicon dioxide (SiOâ ) and the Ge channel was eliminated by capping the strained Ge layer with a relaxed, epitaxial silicon surface layer grown at 400° C. Ge p-MOSFETs fabricated from this structure show a hole mobility enhancement of nearly 8 times that of co-processed bulk Si devices, and the Ge MOSFETs have a peak effective mobility of 1160 cm²/V-s. These MOSFETs demonstrate the possibility of creating a surface channel enhancement mode MOSFET with buried channel-like transport characteristics. |
|
| dc.description |
Singapore-MIT Alliance (SMA) |
|
| dc.format |
40541 bytes |
|
| dc.format |
application/pdf |
|
| dc.language |
en_US |
|
| dc.relation |
Advanced Materials for Micro- and Nano-Systems (AMMNS); |
|
| dc.subject |
strained-Ge |
|
| dc.subject |
SiGe |
|
| dc.subject |
germanium |
|
| dc.subject |
MOSFET |
|
| dc.subject |
mobility |
|
| dc.subject |
strained-Si |
|
| dc.subject |
pMOSFET |
|
| dc.title |
Strained Ge channel p-type metal-oxide-semiconductor field-effect transistors grown on Siâ â xGex/Si virtual substrates |
|
| dc.type |
Article |
|