dc.creator |
Gan, C.L. |
|
dc.creator |
Thompson, Carl V. |
|
dc.creator |
Pey, Kin Leong |
|
dc.creator |
Choi, Wee Kiong |
|
dc.date |
2003-11-29T19:49:07Z |
|
dc.date |
2003-11-29T19:49:07Z |
|
dc.date |
2003-01 |
|
dc.date.accessioned |
2013-10-09T02:32:14Z |
|
dc.date.available |
2013-10-09T02:32:14Z |
|
dc.date.issued |
2013-10-09 |
|
dc.identifier |
http://hdl.handle.net/1721.1/3730 |
|
dc.identifier.uri |
http://koha.mediu.edu.my:8181/xmlui/handle/1721 |
|
dc.description |
Electromigration tests on different Cu dual-damascene interconnect tree structures consisting of various numbers of straight via-to-via lines connected at the common middle terminal have been carried out. Like Al-based interconnects, the reliability of a segment in a Cu-based interconnect tree strongly depends on the stress conditions of connected segments. The analytic model based on a nodal analysis developed for Al trees gives a conservative estimate of the lifetime of Cu-based interconnect trees. However, there are important differences in the results obtained under similar test conditions for Al-based and Cu-based interconnect trees. These differences are attributed to the variations in the architectural schemes of the two metallization systems. The absence of a conducting electromigration-resistant overlayer in Cu technology and the low critical stress for void nucleation at the Cu/inter-level diffusion barrier (i.e. Si₃N₄) interface leads to different failure modes between Cu and Al interconnects. As a result, the most highly stressed segment in a Cu-based interconnect tree is not always the least reliable. Moreover, the possibility of liner rupture at stressed dual-damascene vias leads to significant differences in tree reliabilities in Cu compared to Al. While an interconnect tree can be treated as a fundamental unit whose reliability is independent of that of other units in Al-based interconnect architectures, interconnect trees can not be treated as fundamental units for circuit-level reliability analyses for Cu-based interconnects. |
|
dc.description |
Singapore-MIT Alliance (SMA) |
|
dc.format |
180049 bytes |
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dc.format |
application/pdf |
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dc.language |
en_US |
|
dc.relation |
Advanced Materials for Micro- and Nano-Systems (AMMNS); |
|
dc.subject |
copper dual-damascene interconnect trees |
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dc.subject |
electromigration |
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dc.subject |
via-to-via |
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dc.subject |
dotted-I interconnect trees |
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dc.subject |
levels of metallization |
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dc.title |
Reliability of Multi-Terminal Copper Dual-Damascene Interconnect Trees |
|
dc.type |
Article |
|