DSpace Repository

Reliability of Multi-Terminal Copper Dual-Damascene Interconnect Trees

Show simple item record

dc.creator Gan, C.L.
dc.creator Thompson, Carl V.
dc.creator Pey, Kin Leong
dc.creator Choi, Wee Kiong
dc.date 2003-11-29T19:49:07Z
dc.date 2003-11-29T19:49:07Z
dc.date 2003-01
dc.date.accessioned 2013-10-09T02:32:14Z
dc.date.available 2013-10-09T02:32:14Z
dc.date.issued 2013-10-09
dc.identifier http://hdl.handle.net/1721.1/3730
dc.identifier.uri http://koha.mediu.edu.my:8181/xmlui/handle/1721
dc.description Electromigration tests on different Cu dual-damascene interconnect tree structures consisting of various numbers of straight via-to-via lines connected at the common middle terminal have been carried out. Like Al-based interconnects, the reliability of a segment in a Cu-based interconnect tree strongly depends on the stress conditions of connected segments. The analytic model based on a nodal analysis developed for Al trees gives a conservative estimate of the lifetime of Cu-based interconnect trees. However, there are important differences in the results obtained under similar test conditions for Al-based and Cu-based interconnect trees. These differences are attributed to the variations in the architectural schemes of the two metallization systems. The absence of a conducting electromigration-resistant overlayer in Cu technology and the low critical stress for void nucleation at the Cu/inter-level diffusion barrier (i.e. Si₃N₄) interface leads to different failure modes between Cu and Al interconnects. As a result, the most highly stressed segment in a Cu-based interconnect tree is not always the least reliable. Moreover, the possibility of liner rupture at stressed dual-damascene vias leads to significant differences in tree reliabilities in Cu compared to Al. While an interconnect tree can be treated as a fundamental unit whose reliability is independent of that of other units in Al-based interconnect architectures, interconnect trees can not be treated as fundamental units for circuit-level reliability analyses for Cu-based interconnects.
dc.description Singapore-MIT Alliance (SMA)
dc.format 180049 bytes
dc.format application/pdf
dc.language en_US
dc.relation Advanced Materials for Micro- and Nano-Systems (AMMNS);
dc.subject copper dual-damascene interconnect trees
dc.subject electromigration
dc.subject via-to-via
dc.subject dotted-I interconnect trees
dc.subject levels of metallization
dc.title Reliability of Multi-Terminal Copper Dual-Damascene Interconnect Trees
dc.type Article


Files in this item

Files Size Format View

There are no files associated with this item.

This item appears in the following Collection(s)

Show simple item record

Search DSpace


Advanced Search

Browse

My Account