| dc.creator |
Kan, Eric Win Hong |
|
| dc.creator |
Leoy, C.C. |
|
| dc.creator |
Choi, Wee Kiong |
|
| dc.creator |
Chim, Wai Kin |
|
| dc.creator |
Antoniadis, Dimitri A. |
|
| dc.creator |
Fitzgerald, Eugene A. |
|
| dc.date |
2003-11-24T20:46:06Z |
|
| dc.date |
2003-11-24T20:46:06Z |
|
| dc.date |
2003-01 |
|
| dc.date.accessioned |
2013-10-09T02:32:11Z |
|
| dc.date.available |
2013-10-09T02:32:11Z |
|
| dc.date.issued |
2013-10-09 |
|
| dc.identifier |
http://hdl.handle.net/1721.1/3722 |
|
| dc.identifier.uri |
http://koha.mediu.edu.my:8181/xmlui/handle/1721 |
|
| dc.description |
In this work, we studied the possibility of synthesizing nanocrystalline germanium (Ge) via dry and wet oxidation of both amorphous and polycrystalline Si₀.₅₄Ge₀.₄₆ films. In dry oxidation, Ge was rejected from the growing SiO₂ forming a Ge-rich polycrystalline layer. As for wet oxidation, Ge was incorporated into the oxide, forming a layer of mixed oxide, SixGe₁â xOy. Formation of nanocrystalline Ge was observed when the layer of SixGe₁â xOy was annealed in a N₂ ambient. We have fabricated a metal-insulator-semiconductor structure with nanocrystalline Ge embedded within the insulator layer to study its feasibility as a memory device. |
|
| dc.description |
Singapore-MIT Alliance (SMA) |
|
| dc.format |
497248 bytes |
|
| dc.format |
application/pdf |
|
| dc.language |
en_US |
|
| dc.relation |
Advanced Materials for Micro- and Nano-Systems (AMMNS); |
|
| dc.subject |
germanium nanocrystal |
|
| dc.subject |
silicon-germanium |
|
| dc.subject |
oxidation |
|
| dc.title |
Formation of Nanocrystalline Germanium via Oxidation of Si₀.₅₄Ge₀.₄₆ for Memory Device Applications |
|
| dc.type |
Article |
|