SiGe-On-Insulator (SGOI): Two Structures for CMOS Application

dc.creator	Cheng, Zhiyuan
dc.creator	Jung, Jongwan
dc.creator	Lee, Minjoo L.
dc.creator	Nayfeh, Hasan
dc.creator	Pitera, Arthur J.
dc.creator	Hoyt, Judy L.
dc.creator	Fitzgerald, Eugene A.
dc.creator	Antoniadis, Dimitri A.
dc.date	2003-11-16T17:51:20Z
dc.date	2003-11-16T17:51:20Z
dc.date	2003-01
dc.date.accessioned	2013-10-09T02:31:53Z
dc.date.available	2013-10-09T02:31:53Z
dc.date.issued	2013-10-09
dc.identifier	http://hdl.handle.net/1721.1/3671
dc.identifier.uri	http://koha.mediu.edu.my:8181/xmlui/handle/1721
dc.description	Two SiGe-on-insulator (SGOI) structures for CMOS application are presented: surface-channel strained-Si on SGOI (SSOI) and dual-channel SGOI structures. Comparisons between two structures are made from both device performance and CMOS process point of view. We have demonstrated both structures on SGOI, and have fabricated n-MOSFET’s and p-MOSFET’s on those two structures respectively. Device characteristics are presented. The devices show enhancement on both electron and hole mobilities.
dc.description	Singapore-MIT Alliance (SMA)
dc.format	432824 bytes
dc.format	application/pdf
dc.language	en_US
dc.relation	Advanced Materials for Micro- and Nano-Systems (AMMNS);
dc.subject	strained-Si
dc.subject	SiGe
dc.subject	SiGe-on-Insulator
dc.subject	SGOI
dc.subject	strained-Si on SGOI
dc.subject	SSOI
dc.subject	SOI
dc.subject	dual-channel
dc.subject	surface channel
dc.subject	MOSFET
dc.subject	mobility
dc.subject	bonding
dc.subject	etch-back
dc.title	SiGe-On-Insulator (SGOI): Two Structures for CMOS Application
dc.type	Article

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