GaN Based Nanomaterials Fabrication with Anodic Aluminium Oxide by MOCVD

dc.creator	Wang, Yadong
dc.creator	Sander, Melissa
dc.creator	Peng, Chen
dc.creator	Chua, Soo-Jin
dc.creator	Fonstad, Clifton G. Jr.
dc.date	2003-11-10T19:42:55Z
dc.date	2003-11-10T19:42:55Z
dc.date	2003-01
dc.date.accessioned	2013-10-09T02:31:52Z
dc.date.available	2013-10-09T02:31:52Z
dc.date.issued	2013-10-09
dc.identifier	http://hdl.handle.net/1721.1/3664
dc.identifier.uri	http://koha.mediu.edu.my:8181/xmlui/handle/1721
dc.description	A highly self-ordered hexagonal array of cylindrical pores has been fabricated by anodizing a thin film of Al on substrate and subsequent growth of GaN and InGaN in these nanoholes has been performed. This AAO template-based synthesis method provides a low cost process to fabricate GaN-based nanomaterials fabrication.
dc.description	Singapore-MIT Alliance (SMA)
dc.format	683180 bytes
dc.format	application/pdf
dc.language	en_US
dc.relation	Advanced Materials for Micro- and Nano-Systems (AMMNS);
dc.subject	GaN-based nanomaterials fabrication
dc.subject	template synthesis
dc.subject	anodic porous alumina
dc.subject	AAO template
dc.subject	nitride nanowire arrays
dc.subject	anodic aluminium oxide template
dc.title	GaN Based Nanomaterials Fabrication with Anodic Aluminium Oxide by MOCVD
dc.type	Article

Files in this item

Files	Size	Format	View
There are no files associated with this item.