Radiation-induced errors in memory chips

dc.creator	Peterson R. J.
dc.date	2003
dc.date.accessioned	2013-06-01T10:08:28Z
dc.date.available	2013-06-01T10:08:28Z
dc.date.issued	2013-06-01
dc.identifier	http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332003000200013
dc.identifier	http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=2003&volume=33&issue=2&spage=246
dc.identifier.uri	http://koha.mediu.edu.my:8181/jspui/handle/123456789/8069
dc.description	We have measured probabilities for proton, neutron and pion beams from accelerators to induce temporary or soft errors in a wide range of modern 16 Mb and 64 Mb DRAM memory chips, typical of those used in aircraft electronics. Relations among the cross sections for these particles are deduced. Measurement of alpha particle yields from pions on aluminum, as a surrogate for silicon, indicate that these reaction products are the proximate cause of the charge deposition resulting in errors.
dc.publisher	Sociedade Brasileira de Física
dc.source	Brazilian Journal of Physics
dc.title	Radiation-induced errors in memory chips

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