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Linear polarization of photons produced by the electron plane channeling in a silicon crystal

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dc.creator Denyak V.V.
dc.creator Evseev I.G.
dc.creator Khvastunov V.M.
dc.creator Likhachev V.P.
dc.creator Paschuk S.A.
dc.creator Schelin H.R.
dc.date 2003
dc.date.accessioned 2013-06-01T10:00:28Z
dc.date.available 2013-06-01T10:00:28Z
dc.date.issued 2013-06-01
dc.identifier http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332003000100013
dc.identifier http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=2003&volume=33&issue=1&spage=133
dc.identifier.uri http://koha.mediu.edu.my:8181/jspui/handle/123456789/8021
dc.description We present the results of the polarization and intensity measurements versus photon energy Egamma = 5 - 35 MeV for the photon beam produced by the electron plane channeling with the energies 1.2 and 1.5 GeV in silicon crystals 500 mum and 290 mum thick along the (110) plane. The comparison with results of another research group and theoretical calculations indicate a qualitative agreement. The correlation between the shape of the radiation intensity spectrum and its polarization energy dependence is observed.
dc.publisher Sociedade Brasileira de Física
dc.source Brazilian Journal of Physics
dc.title Linear polarization of photons produced by the electron plane channeling in a silicon crystal


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