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Electron field emission measurements from boron-doped CVD diamond on tantalum

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dc.creator Gonçalves J. A. N.
dc.creator Sandonato G. M.
dc.creator Iha K.
dc.date 2003
dc.date.accessioned 2013-06-01T09:56:57Z
dc.date.available 2013-06-01T09:56:57Z
dc.date.issued 2013-06-01
dc.identifier http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332003000100006
dc.identifier http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=2003&volume=33&issue=1&spage=94
dc.identifier.uri http://koha.mediu.edu.my:8181/jspui/handle/123456789/8000
dc.description Boron-doped polycrystaline diamond films grown by hot-filament-assisted chemical vapor deposition were studied with ultraviolet photoemission spectroscopy (UPS), Raman spectroscopy, X-ray diffractometry and current voltage measurements. The UPS measurement shows that the work function (phi) without electric field is about 3.9 eV . The field-emission current-voltage measurements indicate a threshold voltage ranging from 8.97x106 to 9.64x106 V=m and a work function (phi) about 0.3 eV . These results show that boron doped diamond films exhibit a negative electron affinity in high electric field.
dc.publisher Sociedade Brasileira de Física
dc.source Brazilian Journal of Physics
dc.title Electron field emission measurements from boron-doped CVD diamond on tantalum

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