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| dc.creator |
Gonçalves J. A. N. |
|
| dc.creator |
Sandonato G. M. |
|
| dc.creator |
Iha K. |
|
| dc.date |
2003 |
|
| dc.date.accessioned |
2013-06-01T09:56:57Z |
|
| dc.date.available |
2013-06-01T09:56:57Z |
|
| dc.date.issued |
2013-06-01 |
|
| dc.identifier |
http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332003000100006 |
|
| dc.identifier |
http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=2003&volume=33&issue=1&spage=94 |
|
| dc.identifier.uri |
http://koha.mediu.edu.my:8181/jspui/handle/123456789/8000 |
|
| dc.description |
Boron-doped polycrystaline diamond films grown by hot-filament-assisted chemical vapor deposition were studied with ultraviolet photoemission spectroscopy (UPS), Raman spectroscopy, X-ray diffractometry and current voltage measurements. The UPS measurement shows that the work function (phi) without electric field is about 3.9 eV . The field-emission current-voltage measurements indicate a threshold voltage ranging from 8.97x106 to 9.64x106 V=m and a work function (phi) about 0.3 eV . These results show that boron doped diamond films exhibit a negative electron affinity in high electric field. |
|
| dc.publisher |
Sociedade Brasileira de Física |
|
| dc.source |
Brazilian Journal of Physics |
|
| dc.title |
Electron field emission measurements from boron-doped CVD diamond on tantalum |
|
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