| dc.creator |
Chiquito A. J. |
|
| dc.creator |
Pusep Yu. A. |
|
| dc.creator |
Mergulhão S. |
|
| dc.creator |
Galzerani J. C. |
|
| dc.date |
2002 |
|
| dc.date.accessioned |
2013-06-01T09:39:53Z |
|
| dc.date.available |
2013-06-01T09:39:53Z |
|
| dc.date.issued |
2013-06-01 |
|
| dc.identifier |
http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000400020 |
|
| dc.identifier |
http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=2002&volume=32&issue=3&spage=784 |
|
| dc.identifier.uri |
http://koha.mediu.edu.my:8181/jspui/handle/123456789/7898 |
|
| dc.description |
An electrostatic model was presented for the calculation of the capacitance-voltage characteristics of a semiconductor structure where quantum dots were embedded. The model was based on the linear coupling between the contributions of the quantum dots and the bulk host. We further applied this model to an InAs/GaAs self-assembled quantum dots system. The calculated capacitance was found in good agreement with the experimental curves, providing parameters of the dots ensemble, as the excitation energy of the confined electrons. |
|
| dc.publisher |
Sociedade Brasileira de Física |
|
| dc.source |
Brazilian Journal of Physics |
|
| dc.title |
Capacitance-voltage characteristics of InAs dots: a simple model |
|