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Capacitance-voltage characteristics of InAs dots: a simple model

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dc.creator Chiquito A. J.
dc.creator Pusep Yu. A.
dc.creator Mergulhão S.
dc.creator Galzerani J. C.
dc.date 2002
dc.date.accessioned 2013-06-01T09:39:53Z
dc.date.available 2013-06-01T09:39:53Z
dc.date.issued 2013-06-01
dc.identifier http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000400020
dc.identifier http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=2002&volume=32&issue=3&spage=784
dc.identifier.uri http://koha.mediu.edu.my:8181/jspui/handle/123456789/7898
dc.description An electrostatic model was presented for the calculation of the capacitance-voltage characteristics of a semiconductor structure where quantum dots were embedded. The model was based on the linear coupling between the contributions of the quantum dots and the bulk host. We further applied this model to an InAs/GaAs self-assembled quantum dots system. The calculated capacitance was found in good agreement with the experimental curves, providing parameters of the dots ensemble, as the excitation energy of the confined electrons.
dc.publisher Sociedade Brasileira de Física
dc.source Brazilian Journal of Physics
dc.title Capacitance-voltage characteristics of InAs dots: a simple model

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