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| dc.creator |
Bezerra E. F. |
|
| dc.creator |
Caetano E. W. S. |
|
| dc.creator |
Freire V. N. |
|
| dc.creator |
Costa J. A. P. da |
|
| dc.creator |
Silva Jr. E. F. da |
|
| dc.date |
2002 |
|
| dc.date.accessioned |
2013-06-01T09:14:17Z |
|
| dc.date.available |
2013-06-01T09:14:17Z |
|
| dc.date.issued |
2013-06-01 |
|
| dc.identifier |
http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000200057 |
|
| dc.identifier |
http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=2002&volume=32&issue=2a&spage=442 |
|
| dc.identifier.uri |
http://koha.mediu.edu.my:8181/jspui/handle/123456789/7745 |
|
| dc.description |
The complex mobility of electrons in 3C - and 6H-SiC subjected to intense high frequency electric fields is calculated taking into account effects of band nonparabolicity. The electric field, given by a dc component plus an ac component in the frequency range 0.1-100 THz, is applied along the [0001] ([111]) direction in the hexagonal (cubic) polytype. The real electron mobility presents a characteristic maximum peaking around 6-8 THz, while the imaginary electron mobility is structured, with characteristic minimum and maximum around 2-3 THz and 20{30 THz, respectively. These mobilities are seen to smooth down for higher temperatures in both polytypes. |
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| dc.publisher |
Sociedade Brasileira de Física |
|
| dc.source |
Brazilian Journal of Physics |
|
| dc.title |
AC hot carrier transport in 3C- and 6H-SiC in the terahertz frequency and high lattice temperature regime |
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