أعرض تسجيلة المادة بشكل مبسط
| dc.creator |
Rodrigues Clóves G. |
|
| dc.creator |
Freire Valder N. |
|
| dc.creator |
Vasconcellos Áurea R. |
|
| dc.creator |
Luzzi Roberto |
|
| dc.date |
2002 |
|
| dc.date.accessioned |
2013-06-01T09:13:47Z |
|
| dc.date.available |
2013-06-01T09:13:47Z |
|
| dc.date.issued |
2013-06-01 |
|
| dc.identifier |
http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000200056 |
|
| dc.identifier |
http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=2002&volume=32&issue=2a&spage=439 |
|
| dc.identifier.uri |
http://koha.mediu.edu.my:8181/jspui/handle/123456789/7742 |
|
| dc.description |
We contribute here a theoretical study of the electron mobility in n-doped GaN, InN, and AlN at moderate to high electric fields. We solve the set of coupled nonlinear integro-differential equations of evolution to obtain the steady-state values of the basic intensive nonequilibrium thermodynamic variables for the three materials. The regions with ohmic and non-ohmic behavior in the electron drift velocity dependence on the electric field strength are characterized in the three nitrides. The electron mobility is calculated, and it is shown that the larger corresponds to InN, and the smaller to AlN. |
|
| dc.publisher |
Sociedade Brasileira de Física |
|
| dc.source |
Brazilian Journal of Physics |
|
| dc.title |
Electron mobility in nitride materials |
|
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