Defect centers in a-SiNx: electronic and structural properties

dc.creator	Mota F. de Brito
dc.creator	Justo J. F.
dc.creator	Fazzio A.
dc.date	2002
dc.date.accessioned	2013-06-01T09:13:17Z
dc.date.available	2013-06-01T09:13:17Z
dc.date.issued	2013-06-01
dc.identifier	http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000200055
dc.identifier	http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=2002&volume=32&issue=2a&spage=436
dc.identifier.uri	http://koha.mediu.edu.my:8181/jspui/handle/123456789/7739
dc.description	By combining ab initio methods and interatomic potentials, we investigated the electronic and the structural properties of amorphous silicon nitride. Our results show the trends on the electronic band structure of SiNx (0.5 < x < 1.8) as the nitrogen content changes, and are in good agreement with the experimental data.Hydrogenation of the systems was found to considerably reduce the number of energy levels in the gap. The energy levels which appeared in the materials band gap were compared to the electrically active centers, which have been identified by electron-paramagnetic resonance experiments.
dc.publisher	Sociedade Brasileira de Física
dc.source	Brazilian Journal of Physics
dc.title	Defect centers in a-SiNx: electronic and structural properties

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