| dc.creator |
Laranjeira J. M. G. |
|
| dc.creator |
Khoury H. J. |
|
| dc.creator |
Azevedo W. M. de |
|
| dc.creator |
Vasconcelos E. A. de |
|
| dc.creator |
Silva Jr. E. F. da |
|
| dc.date |
2002 |
|
| dc.date.accessioned |
2013-06-01T09:10:47Z |
|
| dc.date.available |
2013-06-01T09:10:47Z |
|
| dc.date.issued |
2013-06-01 |
|
| dc.identifier |
http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000200050 |
|
| dc.identifier |
http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=2002&volume=32&issue=2a&spage=421 |
|
| dc.identifier.uri |
http://koha.mediu.edu.my:8181/jspui/handle/123456789/7724 |
|
| dc.description |
We report the development and characterization of high quality polyaniline-silicon heterojunction diodes appropriated for use as gas and/or ionizing radiation sensors. Polyaniline thin films 40 nm thick are an active part of the junction structure, that presents excellent electrical characteristics, with rectifying ratio of 50,000 at ± 1.0 Volt bias. The devices are very sensitive to gamma-radiation up to 6,000 Gy and to gas moistures such ammonia, nitric acid and trichloroethylene. The sensitivity of the diodes is observed through shifts of the current-voltage (I-V) curves which can be easily monitored to provide a calibration curve of the sensor either as a radiation dosimeter or as a gas sensor for use in applications in environments demanding gas monitoring or radiation dosimetry. |
|
| dc.publisher |
Sociedade Brasileira de Física |
|
| dc.source |
Brazilian Journal of Physics |
|
| dc.title |
A silicon-polymer heterostructure for sensor applications |
|