| dc.creator |
Zhao S. |
|
| dc.creator |
Justo J. F. |
|
| dc.creator |
Assali L. V. C. |
|
| dc.creator |
Kimerling L. C. |
|
| dc.date |
2002 |
|
| dc.date.accessioned |
2013-06-01T09:10:16Z |
|
| dc.date.available |
2013-06-01T09:10:16Z |
|
| dc.date.issued |
2013-06-01 |
|
| dc.identifier |
http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000200049 |
|
| dc.identifier |
http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=2002&volume=32&issue=2a&spage=418 |
|
| dc.identifier.uri |
http://koha.mediu.edu.my:8181/jspui/handle/123456789/7722 |
|
| dc.description |
Iron-acceptor pairs (Fe-A, A = B, Al, Ga, and In) in silicon were investigated using an ionic-based model, which incorporates the valence electron cloud polarization and the lattice relaxation.Our results are generaly in good agreement with the experimental trends among the Fe-A pairs, describing the increase in the pair donor energy level with increasing A principal quantum number and decreasing pair separation distance, and the pair configurational symmetries. |
|
| dc.publisher |
Sociedade Brasileira de Física |
|
| dc.source |
Brazilian Journal of Physics |
|
| dc.title |
Structure and bonding of iron-acceptor pairs in silicon |
|