The plasma etching of semiconductor surfaces with fluorine-containing compounds has technological interest. Presently, considerable effort is being devoted to understand the chemistry involved. In this work, a numerical modeling analysis of the gas-phase decomposition of CF4/O2 mixtures, in the presence of silicon, was performed. The relative importance of individual processes was determined as well as the effect of the parameters' uncertainties. The results were compared with experimental data. The main etching agent in the system is the fluorine atom. The concentration of the main species, SiF4, CO, CO2 and COF2 depend on the composition of the mixture.