أعرض تسجيلة المادة بشكل مبسط
| dc.creator |
Messias L.G.O. |
|
| dc.creator |
Marega Jr. E. |
|
| dc.date |
2002 |
|
| dc.date.accessioned |
2013-05-30T02:00:39Z |
|
| dc.date.available |
2013-05-30T02:00:39Z |
|
| dc.date.issued |
2013-05-30 |
|
| dc.identifier |
http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000200044 |
|
| dc.identifier |
http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=2002&volume=32&issue=2a&spage=402 |
|
| dc.identifier.uri |
http://koha.mediu.edu.my:8181/jspui/handle/123456789/3462 |
|
| dc.description |
The steady state hole transport properties of GaSb were investigated by the Ensemble Monte Carlo method (EMC). In our model we taken in to account heavy and light hole valence bands, and the following scattering mechanisms: inelastic acoustic phonon; polar optical phonon; nonpolar optical; ionized impurity. The theoretical calculations are compared with available experimental results for the GaSb hole mobility shown good agreement with temperatures from 90K up to 300K. |
|
| dc.publisher |
Sociedade Brasileira de Física |
|
| dc.source |
Brazilian Journal of Physics |
|
| dc.title |
Hole transport characteristics in pure and doped GaSb |
|
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أعرض تسجيلة المادة بشكل مبسط