Ionizing radiation and hot carrier effects in SiC MOS devices

dc.creator	Vasconcelos E. A. de
dc.creator	Silva Jr. E. F. da
dc.creator	Katsube T.
dc.creator	Yoshida S.
dc.date	2002
dc.date.accessioned	2013-05-30T01:58:32Z
dc.date.available	2013-05-30T01:58:32Z
dc.date.issued	2013-05-30
dc.identifier	http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000200040
dc.identifier	http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=2002&volume=32&issue=2a&spage=389
dc.identifier.uri	http://koha.mediu.edu.my:8181/jspui/handle/123456789/3454
dc.description	We performed comparative studies of radiation-induced interface trap generation at n-6H-SiC/SiO2 and Si/SiO2 interfaces for high doses of low energy x-rays in the range 0 to 200 Mrad (Si). We found that radiation-induced interface trap generation at the n-6H-SiC/SiO2 interface is much lower than at the Si/SiO2 interface. The experiments provide evidence of interface trap generation near the SiC conduction band associated with oxide traps.
dc.publisher	Sociedade Brasileira de Física
dc.source	Brazilian Journal of Physics
dc.title	Ionizing radiation and hot carrier effects in SiC MOS devices

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