| dc.creator |
Vasconcelos E. A. de |
|
| dc.creator |
Silva Jr. E. F. da |
|
| dc.creator |
Katsube T. |
|
| dc.creator |
Yoshida S. |
|
| dc.date |
2002 |
|
| dc.date.accessioned |
2013-05-30T01:58:32Z |
|
| dc.date.available |
2013-05-30T01:58:32Z |
|
| dc.date.issued |
2013-05-30 |
|
| dc.identifier |
http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000200040 |
|
| dc.identifier |
http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=2002&volume=32&issue=2a&spage=389 |
|
| dc.identifier.uri |
http://koha.mediu.edu.my:8181/jspui/handle/123456789/3454 |
|
| dc.description |
We performed comparative studies of radiation-induced interface trap generation at n-6H-SiC/SiO2 and Si/SiO2 interfaces for high doses of low energy x-rays in the range 0 to 200 Mrad (Si). We found that radiation-induced interface trap generation at the n-6H-SiC/SiO2 interface is much lower than at the Si/SiO2 interface. The experiments provide evidence of interface trap generation near the SiC conduction band associated with oxide traps. |
|
| dc.publisher |
Sociedade Brasileira de Física |
|
| dc.source |
Brazilian Journal of Physics |
|
| dc.title |
Ionizing radiation and hot carrier effects in SiC MOS devices |
|