المستودع الأكاديمي جامعة المدينة

Surface instability and dislocation nucleation in strained epitaxial layers

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dc.creator Trushin O.
dc.creator Granato E.
dc.creator Ying S.C.
dc.creator Kosterlitz J.M.
dc.creator Ala-Nissila T.
dc.creator Salo P.
dc.date 2002
dc.date.accessioned 2013-05-30T01:55:23Z
dc.date.available 2013-05-30T01:55:23Z
dc.date.issued 2013-05-30
dc.identifier http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000200034
dc.identifier http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=2002&volume=32&issue=2a&spage=369
dc.identifier.uri http://koha.mediu.edu.my:8181/jspui/handle/123456789/3442
dc.description We have studied numerically the stability and defect nucleation in epitaxial layers on a substrate with lattice mismatch. Stress relaxation and energy barriers for misfit dislocation nucleation are estimated using modern methods for saddle point search based on a combination of activation with local repulsive potential and the Nudged Elastic Band method. Stress relaxation processes correspond to different transition paths from coherent to incoherent states of the epitaxial layer.Using a two-dimensional atomistic model with Lennard-Jones interacting potential, we and different equilibrium critical thickness and activation energy behavior for dislocation nucleation of epitaxial films under tensile and compressive strain. For tensile strain, the energy barrier decreases with thickness while it reaches a constant value for compressive strain.
dc.publisher Sociedade Brasileira de Física
dc.source Brazilian Journal of Physics
dc.title Surface instability and dislocation nucleation in strained epitaxial layers


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