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Low-temperature electron mobility in parabolic quantum wells

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dc.creator Seraide R. M.
dc.creator Hai G.-Q.
dc.date 2002
dc.date.accessioned 2013-05-30T01:51:19Z
dc.date.available 2013-05-30T01:51:19Z
dc.date.issued 2013-05-30
dc.identifier http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000200026
dc.identifier http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=2002&volume=32&issue=2a&spage=344
dc.identifier.uri http://koha.mediu.edu.my:8181/jspui/handle/123456789/3426
dc.description We present a theoretical study on the electron mobility and scattering mechanism in a remotely doped AlGaAs wide parabolic quantum well. Electron mobilities in different subbands are calculated from the self-consistent results of the subband energy and wavefunction in the system. The scattering due to ionized impurities and alloy disorder is considered. We show theinterplay of the different scattering mechanisms.
dc.publisher Sociedade Brasileira de Física
dc.source Brazilian Journal of Physics
dc.title Low-temperature electron mobility in parabolic quantum wells


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