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Optical studies of the correlation between interface disorder and the photoluminescence line shape in GaAs/InGaP quantum wells

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dc.creator Laureto E.
dc.creator Meneses E. A.
dc.creator Carvalho Jr. W.
dc.creator Bernussi A. A.
dc.creator Ribeiro E.
dc.creator Silva E. C. F. da
dc.creator Oliveira J. B. B. de
dc.date 2002
dc.date.accessioned 2013-05-30T01:46:40Z
dc.date.available 2013-05-30T01:46:40Z
dc.date.issued 2013-05-30
dc.identifier http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000200017
dc.identifier http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=2002&volume=32&issue=2a&spage=314
dc.identifier.uri http://koha.mediu.edu.my:8181/jspui/handle/123456789/3408
dc.description Photoluminescence (PL) and excitation PL measurements have been performed at different temperatures in a number of lattice-matched GaAs/In0.49Ga0.51P quantum wells, where the uctuations of the potential energy are comparable with the thermal energy of the photocreated carriers. Two samples with different well widths allow to observe a series of anomalous e ects in their optical response. The observed effects are related to the disorder in the interface, characterizing uctuations in the confinement potential energy. It is proposed that the carrier relaxation processes occur either at the local minima or at the absolute minimum of the confinement potential, depending on the ratio of the thermal energy and the magnitude of the potential fluctuations.
dc.publisher Sociedade Brasileira de Física
dc.source Brazilian Journal of Physics
dc.title Optical studies of the correlation between interface disorder and the photoluminescence line shape in GaAs/InGaP quantum wells


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