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Ballistic transport in semiconductor quantum wires in the presence of defects

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dc.creator Rocha A. R.
dc.creator Brum J. A.
dc.date 2002
dc.date.accessioned 2013-05-30T01:44:08Z
dc.date.available 2013-05-30T01:44:08Z
dc.date.issued 2013-05-30
dc.identifier http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000200012
dc.identifier http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=2002&volume=32&issue=2a&spage=296
dc.identifier.uri http://koha.mediu.edu.my:8181/jspui/handle/123456789/3398
dc.description We present calculations of the conductance in semiconductor quasi-one-dimensional systems using the Landauer formalism. We consider the effects on the transport properties inside semiconductor quantum waveguides of different shapes when a defect is located either in the wire region or in the quasi-two-dimensional region. We observe changes on the plateau's threshold when the defect is placed inside the wire and lowering of the conductance plateaus themselves below the conductance quantum G0 =2e² /h when the defect is outside the wire.
dc.publisher Sociedade Brasileira de Física
dc.source Brazilian Journal of Physics
dc.title Ballistic transport in semiconductor quantum wires in the presence of defects


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