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Anomalous blueshift in vertically coupled InAs/GaAs quantum dots using InGaAs strain-reducing layers

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dc.creator Silva M. J. da
dc.creator Quivy A. A.
dc.date 2002
dc.date.accessioned 2013-05-30T01:43:07Z
dc.date.available 2013-05-30T01:43:07Z
dc.date.issued 2013-05-30
dc.identifier http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000200010
dc.identifier http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=2002&volume=32&issue=2a&spage=290
dc.identifier.uri http://koha.mediu.edu.my:8181/jspui/handle/123456789/3394
dc.description The vertical coupling of InAs quantum dots and their capping with In0. 1Ga0. 9As layers were investigated in order to shift the optical emission of the structures toward longer wavelengths. We observed that both ways can not be used simultaneously by just replacing part of the usual GaAs spacer layer by In0. 1Ga0. 9As because the intermixing of Ga and In atoms is enhanced in stacked layers and causes a blueshift of the emission instead of the expected redshift.
dc.publisher Sociedade Brasileira de Física
dc.source Brazilian Journal of Physics
dc.title Anomalous blueshift in vertically coupled InAs/GaAs quantum dots using InGaAs strain-reducing layers


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