| dc.creator |
Chiquito A. J. |
|
| dc.creator |
Pusep Yu. A. |
|
| dc.creator |
Mergulhão S. |
|
| dc.creator |
Gobato Y. Galvão |
|
| dc.creator |
Galzerani J. C. |
|
| dc.date |
2002 |
|
| dc.date.accessioned |
2013-05-30T01:42:37Z |
|
| dc.date.available |
2013-05-30T01:42:37Z |
|
| dc.date.issued |
2013-05-30 |
|
| dc.identifier |
http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000200009 |
|
| dc.identifier |
http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=2002&volume=32&issue=2a&spage=287 |
|
| dc.identifier.uri |
http://koha.mediu.edu.my:8181/jspui/handle/123456789/3392 |
|
| dc.description |
The characteristics of multi-layered InAs/GaAs self assembled quantum dots (SAQDs) annealed after the growth were here studied using a combination of capacitance-voltage (C-V) measurements,Raman scattering and photoluminescence (PL) spectroscopy. The combination of the results obtained with the three techniques, gave evidences that the annealing at 500º C causes the sharpness of the SAQDs interfaces, while the annealing at 600º C eliminated the SAQDs. However, the comparison with the case of single layered SAQDs, revealed a thermal stability of the last system even at an annealing temperature of 700º C, thus confirming the role of the interlayer strain in the low temperature diffusion process. |
|
| dc.publisher |
Sociedade Brasileira de Física |
|
| dc.source |
Brazilian Journal of Physics |
|
| dc.title |
Influence of annealing on the optical and electrical properties of multilayered InAs/GaAs quantum dots |
|