| dc.creator |
Brandi H.S. |
|
| dc.creator |
Latgé A. |
|
| dc.creator |
Oliveira L.E. |
|
| dc.date |
2002 |
|
| dc.date.accessioned |
2013-05-30T01:40:06Z |
|
| dc.date.available |
2013-05-30T01:40:06Z |
|
| dc.date.issued |
2013-05-30 |
|
| dc.identifier |
http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000200004 |
|
| dc.identifier |
http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=2002&volume=32&issue=2a&spage=262 |
|
| dc.identifier.uri |
http://koha.mediu.edu.my:8181/jspui/handle/123456789/3382 |
|
| dc.description |
We extend the dressed-atom approach to treat the interaction of a laser field with a semiconductor system. The semiconductor is modeled via a simple Kane band-structure scheme and the interaction with the laser field is incorporate through the renormalization of the semiconductor energy gap and conduction/valence effective masses. Far from resonances, such one-body approach allows the study of the effects of laser fields on a variety of optoelectronic phenomena in semiconductor systems for which the effective-mass approximation provides a good physical description. We calculate the effects originated by the laser-dressing on the donor and exciton peack energies in quantum-well heterostructures, and show that they may be quite considerable and observable. |
|
| dc.publisher |
Sociedade Brasileira de Física |
|
| dc.source |
Brazilian Journal of Physics |
|
| dc.title |
Laser effects in semiconductor heterostructures within an extended dressed-atom approach |
|