أعرض تسجيلة المادة بشكل مبسط
dc.creator |
Jankov I.R. |
|
dc.creator |
Szente R.N. |
|
dc.creator |
Goldman I.D. |
|
dc.creator |
Carreño M.N.P. |
|
dc.creator |
Swart J.W. |
|
dc.creator |
Landers R. |
|
dc.date |
2001 |
|
dc.date.accessioned |
2013-05-30T01:16:51Z |
|
dc.date.available |
2013-05-30T01:16:51Z |
|
dc.date.issued |
2013-05-30 |
|
dc.identifier |
http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332001000400005 |
|
dc.identifier |
http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=2001&volume=31&issue=4&spage=552 |
|
dc.identifier.uri |
http://koha.mediu.edu.my:8181/jspui/handle/123456789/3290 |
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dc.description |
We present a method of sample preparation for studies of ion implantation on metal surfaces. The method, employing a mechanical mask, is specially adapted for samples analysed by Scanning Force Microscopy. It was successfully tested on polycrystallyne copper substrates implanted with phosphorus ions at an acceleration voltage of 39keV. The changes of the electrical properties of the surface were measured by Kelvin Probe Force Microscopy and the surface composition was analysed by Auger Electron Spectroscopy. |
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dc.publisher |
Sociedade Brasileira de Física |
|
dc.source |
Brazilian Journal of Physics |
|
dc.title |
Sample preparation method for scanning force microscopy |
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أعرض تسجيلة المادة بشكل مبسط