أعرض تسجيلة المادة بشكل مبسط

dc.creator Jankov I.R.
dc.creator Szente R.N.
dc.creator Goldman I.D.
dc.creator Carreño M.N.P.
dc.creator Swart J.W.
dc.creator Landers R.
dc.date 2001
dc.date.accessioned 2013-05-30T01:16:51Z
dc.date.available 2013-05-30T01:16:51Z
dc.date.issued 2013-05-30
dc.identifier http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332001000400005
dc.identifier http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=2001&volume=31&issue=4&spage=552
dc.identifier.uri http://koha.mediu.edu.my:8181/jspui/handle/123456789/3290
dc.description We present a method of sample preparation for studies of ion implantation on metal surfaces. The method, employing a mechanical mask, is specially adapted for samples analysed by Scanning Force Microscopy. It was successfully tested on polycrystallyne copper substrates implanted with phosphorus ions at an acceleration voltage of 39keV. The changes of the electrical properties of the surface were measured by Kelvin Probe Force Microscopy and the surface composition was analysed by Auger Electron Spectroscopy.
dc.publisher Sociedade Brasileira de Física
dc.source Brazilian Journal of Physics
dc.title Sample preparation method for scanning force microscopy


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أعرض تسجيلة المادة بشكل مبسط