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Dielectric properties of thin film Al/Sb2Pb1Se7/Al devices

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dc.creator Wagle Shaila
dc.creator Shirodkar Vinay
dc.date 2000
dc.date.accessioned 2013-05-30T00:14:24Z
dc.date.available 2013-05-30T00:14:24Z
dc.date.issued 2013-05-30
dc.identifier http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332000000300012
dc.identifier http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=2000&volume=30&issue=3&spage=554
dc.identifier.uri http://koha.mediu.edu.my:8181/jspui/handle/123456789/3030
dc.description Metal - glass metal, MGM, thin film devices are prepared using vacuum deposition of Sb2Pb1Se7 compound. The capacitance and the loss tangent variation as a function of temperature and frequency is studied. The observed characteristics are explained using small signal ac circuit analysis. It is shown that the theoretical curve generated using the ac circuit analysis gives excellent fitting with the experimental curve.
dc.publisher Sociedade Brasileira de Física
dc.source Brazilian Journal of Physics
dc.title Dielectric properties of thin film Al/Sb2Pb1Se7/Al devices


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