| dc.creator |
Pereyra I. |
|
| dc.creator |
Villacorta C. A. |
|
| dc.creator |
Carreño M.N.P. |
|
| dc.creator |
Prado R.J. |
|
| dc.creator |
Fantini M.C.A. |
|
| dc.date |
2000 |
|
| dc.date.accessioned |
2013-05-30T00:12:52Z |
|
| dc.date.available |
2013-05-30T00:12:52Z |
|
| dc.date.issued |
2013-05-30 |
|
| dc.identifier |
http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332000000300009 |
|
| dc.identifier |
http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=2000&volume=30&issue=3&spage=533 |
|
| dc.identifier.uri |
http://koha.mediu.edu.my:8181/jspui/handle/123456789/3021 |
|
| dc.description |
We have shown that close to stoichiometry RF PECVD amorphous silicon carbon alloys deposited under silane starving plasma conditions exhibit a tendency towards c-SiC chemical order. Motivated by this trend, we further explore the effect of increasing RF power and H2 dilution of the gaseous mixtures, aiming to obtain the amorphous counterpart of c-SiC by the RF-PECVD technique. Doping experiments were also performed on ordered material using phosphorus and nitrogen as donor impurities and boron and aluminum as acceptor ones. For nitrogen a doping efficiency close to device quality a-Si:H was obtained, the lower activation energy being 0,12 eV with room temperature dark conductivity of 2.10-3 (omega.cm). Nitrogen doping efficiency was higher than phosphorous for all studied samples. For p-type doping, results indicate that, even though the attained conductivity values are not device levels, aluminum doping conducted to a promising shift in the Fermi level. Also, aluminum resulted a more efficient acceptor than boron, in accordance to observations in crystalline SiC material. |
|
| dc.publisher |
Sociedade Brasileira de Física |
|
| dc.source |
Brazilian Journal of Physics |
|
| dc.title |
Highly ordered amorphous silicon-carbon alloys obtained by RF PECVD |
|