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Space-charge-limited conduction in thin film Al/Sb2Pb1Se7/Al devices

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dc.creator Wagle Shaila
dc.creator Shirodkar Vinay
dc.date 2000
dc.date.accessioned 2013-05-30T00:02:40Z
dc.date.available 2013-05-30T00:02:40Z
dc.date.issued 2013-05-30
dc.identifier http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332000000200019
dc.identifier http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=2000&volume=30&issue=2&spage=380
dc.identifier.uri http://koha.mediu.edu.my:8181/jspui/handle/123456789/2960
dc.description Thin film Al/Sb2Pb1Se7/Al, MGM, sandwiched structures, prepared using thermal evaporation technique have been studied. The DC measurements at low electric field suggest that the electrical transport is governed by space charge limited conduction (SCLC) mechanism. The detailed analysis of current-voltage limited conduction (SCLC) mechanism characteristics on the basis of SCLC theory reveals the presence of uniformly distributed trap density of the order of 10(23) m-3 eV-1 with average activation energy 0.48 eV.
dc.publisher Sociedade Brasileira de Física
dc.source Brazilian Journal of Physics
dc.title Space-charge-limited conduction in thin film Al/Sb2Pb1Se7/Al devices


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