المستودع الأكاديمي جامعة المدينة

Morphological, optical and structural properties of zero-net-strained InGaAsP/InP structures grown by LP-MOVPE for 1.55mm laser applications

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dc.creator Carvalho Jr Wilson de
dc.creator Bernussi Ayrton André
dc.creator Furtado Mario Tosi
dc.creator Gobbi Angelo Luiz
dc.creator Cotta Mônica
dc.date 1999
dc.date.accessioned 2013-05-29T23:42:00Z
dc.date.available 2013-05-29T23:42:00Z
dc.date.issued 2013-05-30
dc.identifier http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400049
dc.identifier http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=1999&volume=29&issue=4&spage=839
dc.identifier.uri http://koha.mediu.edu.my:8181/jspui/handle/123456789/2837
dc.description Zero-Net-Strained (ZNS) InGaAsP/InGaAsP/InP Multi Quantum Wells (MQW) structures grown by Low Pressure Metalorganic Vapor Phase Epitaxy for 1.55mum laser applications were investigated using atomic force microscopy, photoluminescence spectroscopy and X-ray diffraction. The morphology exhibits a strong anisotropic and modulated behavior. The photoluminescence spectrum shows a broad emission band below the fundamental quantum well transition. The results indicate a strong influence of the growth rate, growth temperature and barrier composition on the surface morphology, and on the optical and structural properties of the ZNS structures. Ridge wave-guide ZNS-MQW laser structures grown at optimized conditions exhibited excellent electro-optic characteristics with low threshold current and high efficiency.
dc.publisher Sociedade Brasileira de Física
dc.source Brazilian Journal of Physics
dc.title Morphological, optical and structural properties of zero-net-strained InGaAsP/InP structures grown by LP-MOVPE for 1.55mm laser applications


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