| dc.creator |
Silva R. Claudino da |
|
| dc.creator |
Ferraz A. C. |
|
| dc.date |
1999 |
|
| dc.date.accessioned |
2013-05-29T23:39:57Z |
|
| dc.date.available |
2013-05-29T23:39:57Z |
|
| dc.date.issued |
2013-05-30 |
|
| dc.identifier |
http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400045 |
|
| dc.identifier |
http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=1999&volume=29&issue=4&spage=823 |
|
| dc.identifier.uri |
http://koha.mediu.edu.my:8181/jspui/handle/123456789/2826 |
|
| dc.description |
We investigate the stability and electronic structure of 1×2 and 2×2 GaAs(001):Te and InAs(001):Te surfaces with different degrees of tellurium coverage (thetaTe = <img src="http:/img/fbpe/bjp/v29n4/a4414.gif" alt="a4414.gif (106 bytes)" align="absmiddle">, <img src="http:/img/fbpe/bjp/v29n4/a4412.gif" alt="a4412.gif (100 bytes)" align="absmiddle">, <img src="http:/img/fbpe/bjp/v29n4/a4434.gif" alt="a4434.gif (104 bytes)" align="absmiddle">, 1), by means of rst-principles pseudopotential calculations within density-functional theory. The adsorption stability decreases as the tellurium coverage increases. The adsorption on InAs(001) is more stable than on GaAs(001). As-Ga (or As-In) bonds for the uppermost As atoms are s²p² -like (nearly planar), while the Te bonds at the surfaces are sp³-like. The hetero-dimers in thetaTe = <img src="http:/img/fbpe/bjp/v29n4/a4412.gif" alt="a4412.gif (100 bytes)" align="absmiddle"> modify the character of GaAs(001):Te and InAs(001):Te surfaces resulting in a semiconductor structure. |
|
| dc.publisher |
Sociedade Brasileira de Física |
|
| dc.source |
Brazilian Journal of Physics |
|
| dc.title |
Tellurium - modified surface states of GaAs(001) and InAs(001) |
|