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Atomic geometry and energetics of native defects in cubic boron nitride

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dc.creator Orellana W.
dc.creator Chacham H.
dc.date 1999
dc.date.accessioned 2013-05-29T23:37:26Z
dc.date.available 2013-05-29T23:37:26Z
dc.date.issued 2013-05-30
dc.identifier http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400040
dc.identifier http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=1999&volume=29&issue=4&spage=801
dc.identifier.uri http://koha.mediu.edu.my:8181/jspui/handle/123456789/2811
dc.description We use first-principles calculations to investigate the electronic structure, atomic geometries and formation energies of point vacancies (V B , V N ), antisites (B N , N B ) and interstitials (Bi , Ni ) in cubic boron nitride (c-BN). We find that nitrogen and boron vacancies exhibit the lowest formation energies in nonstoichiometric c-BN for p-type and n-type conditions, respectively, showing intrinsic donor(V B ) and acceptor (V N ) characters. The equilibrium geometries show large outward breathing relaxations for both vacancies and for B N , with slight Jahn-Teller distortions from Td symmetry. For N B we nd an off-center distortion inducing a negative-U behavior in this center. For both interstitial centers we find stable confi- gurations in which an atomic pair occupies a nitrogen site in the lattice, N-N for Ni and N-B for Bi . These systems are stable for the different charge states investigated.
dc.publisher Sociedade Brasileira de Física
dc.source Brazilian Journal of Physics
dc.title Atomic geometry and energetics of native defects in cubic boron nitride


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