Observation of low frequency oscillations in GaAs samples grown by molecular beam epitaxy at low temperatures

dc.creator	Rubinger R. M.
dc.creator	Oliveira A. G. de
dc.creator	Ribeiro G. M.
dc.creator	Soares D. A. W.
dc.creator	Moreira M. V. B.
dc.date	1999
dc.date.accessioned	2013-05-29T23:36:56Z
dc.date.available	2013-05-29T23:36:56Z
dc.date.issued	2013-05-30
dc.identifier	http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400039
dc.identifier	http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=1999&volume=29&issue=4&spage=797
dc.identifier.uri	http://koha.mediu.edu.my:8181/jspui/handle/123456789/2808
dc.description	We have observed Low Frequency Oscillations (LFO) in a GaAs sample grown by molecular beam epitaxy (MBE) at 300 °C as a function of applied electric field, temperature and illumination intensity. Time series of the oscillations for different values of the applied electric field at room temperature were obtained. We have also obtained the jxE characteristics as a function of temperature and light intensity. We were able to control the LFO using three experimental parameters, the electrical field, which controls the oscillation frequency, and the temperature and illumination intensity, which control the carrier density and field-enhanced trapping. We were able to identify the LFO dependence on the carrier density and on the field-enhanced trapping.
dc.publisher	Sociedade Brasileira de Física
dc.source	Brazilian Journal of Physics
dc.title	Observation of low frequency oscillations in GaAs samples grown by molecular beam epitaxy at low temperatures

الملفات في هذه المادة

الملفات	الحجم	الصيغة	عرض
لا توجد أي ملفات مرتبطة بهذه المادة.