| dc.creator |
Rubinger R.M. |
|
| dc.creator |
Oliveira A.G. de |
|
| dc.creator |
Ribeiro G.M. |
|
| dc.creator |
Bezerra J.C. |
|
| dc.creator |
Silva C.M. |
|
| dc.creator |
Rodrigues W.N. |
|
| dc.creator |
Moreira M.V.B. |
|
| dc.date |
1999 |
|
| dc.date.accessioned |
2013-05-29T23:36:26Z |
|
| dc.date.available |
2013-05-29T23:36:26Z |
|
| dc.date.issued |
2013-05-30 |
|
| dc.identifier |
http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400038 |
|
| dc.identifier |
http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=1999&volume=29&issue=4&spage=793 |
|
| dc.identifier.uri |
http://koha.mediu.edu.my:8181/jspui/handle/123456789/2805 |
|
| dc.description |
In this work we present studies for the behavior of impurity breakdown of two GaAs samples grown by Molecular Beam Epitaxy at 200°C and 300°C. We vary the temperature and the illumination intensity. For the sample grown at 200°C, the transport mechanism after the breakdown is of the same type of the main free carriers at low electric fields. Below 100K, a clear dependence of the threshold electric field with temperature was observed. The sample grown at 300°C shows a breakdown due to an acceptor level at 41meV from the valence band. The threshold electric field increases with illumination due to the generation of free electrons by deep levels. A similar behavior was also observed for a Cr doped GaAs sample. |
|
| dc.publisher |
Sociedade Brasileira de Física |
|
| dc.source |
Brazilian Journal of Physics |
|
| dc.title |
Impurity breakdown in GaAs samples grown by molecular beam Epitaxy |
|