| dc.creator |
Bezerra E. F. |
|
| dc.creator |
Caetano E. W. S. |
|
| dc.creator |
Freire V. N. |
|
| dc.creator |
Silva Jr. E. F. da |
|
| dc.creator |
Costa J. A. P. da |
|
| dc.date |
1999 |
|
| dc.date.accessioned |
2013-05-29T23:35:25Z |
|
| dc.date.available |
2013-05-29T23:35:25Z |
|
| dc.date.issued |
2013-05-30 |
|
| dc.identifier |
http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400036 |
|
| dc.identifier |
http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=1999&volume=29&issue=4&spage=785 |
|
| dc.identifier.uri |
http://koha.mediu.edu.my:8181/jspui/handle/123456789/2799 |
|
| dc.description |
A study of the subpicosecond high-field electron transport transient in 3C- and 6H-SiC polytypes at high lattice temperatures is performed. Electric field intensities up to 1000 kV/cm and lattice temperatures of 300, 673, and 1073 K are considered. It is shown that the transient regime behavior depends on the electric field intensity as well as on the lattice temperature, but it is always shorter or of the order of 0.3 ps. For the lowest lattice temperature, an electron velocity overshoot can always occur when the electric field intensity is higher than 300 kV/cm, but it decreases and can even disappear when the lattice temperature is raised. |
|
| dc.publisher |
Sociedade Brasileira de Física |
|
| dc.source |
Brazilian Journal of Physics |
|
| dc.title |
High temperature behavior of subpicosecond electron transport transient in 3C- and 6H-SiC |
|