| dc.creator |
Menchero J. G. |
|
| dc.date |
1999 |
|
| dc.date.accessioned |
2013-05-29T23:34:55Z |
|
| dc.date.available |
2013-05-29T23:34:55Z |
|
| dc.date.issued |
2013-05-30 |
|
| dc.identifier |
http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400035 |
|
| dc.identifier |
http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=1999&volume=29&issue=4&spage=779 |
|
| dc.identifier.uri |
http://koha.mediu.edu.my:8181/jspui/handle/123456789/2796 |
|
| dc.description |
Acceptor binding energies in zinc-blende semiconductors are determined within the tight-binding formalism. The importance of fitting the valence-band masses in the (100) as well as (111) directions is discussed, and parametrizations that specifically fit the valence-band anisotropy are used to calculate Ge acceptor levels in Al xGa1-x As alloys. The sensitivity of the calculated energies to the parameters that determine bulk masses is investigated, as well as the effect of varying the on-site energy of the impurity. A comparison is made between first-neighbor and second-neighbor hopping models. For shallow levels, both approaches give the same results. For deeper levels, however, important differences arise. Experimental evidence suggests that first-neighbor models are better suited for describing intermediate to deep levels. |
|
| dc.publisher |
Sociedade Brasileira de Física |
|
| dc.source |
Brazilian Journal of Physics |
|
| dc.title |
A tight-binding study of acceptor levels in semiconductors |
|