| dc.creator |
Santos A. M. dos |
|
| dc.creator |
Beliaev D. |
|
| dc.creator |
Scolfaro L. M. R. |
|
| dc.creator |
Leite J. R. |
|
| dc.date |
1999 |
|
| dc.date.accessioned |
2013-05-29T23:34:25Z |
|
| dc.date.available |
2013-05-29T23:34:25Z |
|
| dc.date.issued |
2013-05-30 |
|
| dc.identifier |
http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400034 |
|
| dc.identifier |
http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=1999&volume=29&issue=4&spage=775 |
|
| dc.identifier.uri |
http://koha.mediu.edu.my:8181/jspui/handle/123456789/2793 |
|
| dc.description |
A theoretical semi-classical method to calculate the modulated field profile in a semiconductor is presented. The behavior of quasi-Fermi levels and chemical potentials for the majority and minority carriers is investigated. Systematic studies of the non-thermodynamic equilibrium electric potential profile as a function of the modulation light intensity are performed. |
|
| dc.publisher |
Sociedade Brasileira de Física |
|
| dc.source |
Brazilian Journal of Physics |
|
| dc.title |
Quasi-fermi levels, chemical and electric potential profiles of a semiconductor under illumination |
|