أعرض تسجيلة المادة بشكل مبسط
dc.creator |
Beloto A. F. |
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dc.creator |
Abramof E. |
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dc.creator |
Ueda M. |
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dc.creator |
Berni L. A. |
|
dc.creator |
Gomes G. F. |
|
dc.date |
1999 |
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dc.date.accessioned |
2013-05-29T23:33:25Z |
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dc.date.available |
2013-05-29T23:33:25Z |
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dc.date.issued |
2013-05-30 |
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dc.identifier |
http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400032 |
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dc.identifier |
http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=1999&volume=29&issue=4&spage=768 |
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dc.identifier.uri |
http://koha.mediu.edu.my:8181/jspui/handle/123456789/2787 |
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dc.description |
In the present study we use x-ray diffraction methods to characterize the surface of Si wafers irradiated with nitrogen by Plasma Immersion Ion Implantation. This is a non-line-of-sight ion implantation method, which allows three-dimensional treatment of materials including semiconductors, metals and dielectrics. The atomic concentration profiles in the implanted Si wafers were measured by Auger electron spectroscopy. The (004) Si rocking curve ( omega-scan) was measured in a high resolution x-ray diffractometer equipped with a Ge (220) four-crystal monochromator before and after implantation. A distortion of the Si (004)-rocking curve was clearly observed for the as-implanted sample. This rocking curve was successfully simulated by dynamical theory of x-ray diffraction, assuming a Gaussian strain profile through the implanted region. The analysis made by x-ray difraction and Auger electron spectroscopy revealed successful implantation of ions with ac- cumulated nitrogen dose of 1.5 x <FONT FACE=Symbol>10(17) </FONT>cm-3 .The Si wafers can be used as high sensitivity monitors in the Plasma Immersion Ion Implantation process, especially at the low dose range. |
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dc.publisher |
Sociedade Brasileira de Física |
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dc.source |
Brazilian Journal of Physics |
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dc.title |
Plasma ion implantation of nitrogen into silicon: high resolution x-ray diffraction |
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أعرض تسجيلة المادة بشكل مبسط