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Plasma ion implantation of nitrogen into silicon: high resolution x-ray diffraction

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dc.creator Beloto A. F.
dc.creator Abramof E.
dc.creator Ueda M.
dc.creator Berni L. A.
dc.creator Gomes G. F.
dc.date 1999
dc.date.accessioned 2013-05-29T23:33:25Z
dc.date.available 2013-05-29T23:33:25Z
dc.date.issued 2013-05-30
dc.identifier http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400032
dc.identifier http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=1999&volume=29&issue=4&spage=768
dc.identifier.uri http://koha.mediu.edu.my:8181/jspui/handle/123456789/2787
dc.description In the present study we use x-ray diffraction methods to characterize the surface of Si wafers irradiated with nitrogen by Plasma Immersion Ion Implantation. This is a non-line-of-sight ion implantation method, which allows three-dimensional treatment of materials including semiconductors, metals and dielectrics. The atomic concentration profiles in the implanted Si wafers were measured by Auger electron spectroscopy. The (004) Si rocking curve ( omega-scan) was measured in a high resolution x-ray diffractometer equipped with a Ge (220) four-crystal monochromator before and after implantation. A distortion of the Si (004)-rocking curve was clearly observed for the as-implanted sample. This rocking curve was successfully simulated by dynamical theory of x-ray diffraction, assuming a Gaussian strain profile through the implanted region. The analysis made by x-ray difraction and Auger electron spectroscopy revealed successful implantation of ions with ac- cumulated nitrogen dose of 1.5 x <FONT FACE=Symbol>10(17) </FONT>cm-3 .The Si wafers can be used as high sensitivity monitors in the Plasma Immersion Ion Implantation process, especially at the low dose range.
dc.publisher Sociedade Brasileira de Física
dc.source Brazilian Journal of Physics
dc.title Plasma ion implantation of nitrogen into silicon: high resolution x-ray diffraction


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