| dc.creator |
Piamonteze Cínthia |
|
| dc.creator |
Tessler Leandro R. |
|
| dc.creator |
Alves M. C. Martins |
|
| dc.creator |
Tolentino H. |
|
| dc.date |
1999 |
|
| dc.date.accessioned |
2013-05-29T23:31:55Z |
|
| dc.date.available |
2013-05-29T23:31:55Z |
|
| dc.date.issued |
2013-05-30 |
|
| dc.identifier |
http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400029 |
|
| dc.identifier |
http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=1999&volume=29&issue=4&spage=756 |
|
| dc.identifier.uri |
http://koha.mediu.edu.my:8181/jspui/handle/123456789/2778 |
|
| dc.description |
We report a comparative Extended X-Ray Fine Structure (EXAFS) study of Er in a-Si:H prepared by Er implantation in a-Si:H and by co-sputtering undergoing the same cumulative annealing processes. It was found that the Er environment in as-implanted samples is formed by Si atoms, which are replaced by oxygen under annealing. In the co-sputtered samples, the initial low coordination oxygen environment evolves under thermal treatment to an Er2O3 -like neighborhood. |
|
| dc.publisher |
Sociedade Brasileira de Física |
|
| dc.source |
Brazilian Journal of Physics |
|
| dc.title |
Environment of Er in a-Si:H: co-sputtering versus ion implantation |
|