| dc.creator |
Bernussi A.A. |
|
| dc.creator |
Carvalho Jr. W. |
|
| dc.creator |
Furtado M.T. |
|
| dc.creator |
Gobbi A.L. |
|
| dc.date |
1999 |
|
| dc.date.accessioned |
2013-05-29T23:30:55Z |
|
| dc.date.available |
2013-05-29T23:30:55Z |
|
| dc.date.issued |
2013-05-30 |
|
| dc.identifier |
http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400027 |
|
| dc.identifier |
http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=1999&volume=29&issue=4&spage=746 |
|
| dc.identifier.uri |
http://koha.mediu.edu.my:8181/jspui/handle/123456789/2772 |
|
| dc.description |
Strained and partially relaxed In1-xGa xAs yP1-y /InP single quantum wells (SQWs) with different cap layer thicknesses and biaxial strain values grown by low-pressure metalorganic vapor phase epitaxy (LP-MOVPE) were investigated by double crystal X-ray diffraction, photoluminescence microscopy (PLM) imaging and photoluminescence spectroscopy techniques. Our results indicate a significant improvement of the optical quality of the quaternary wells with increasing values of the cap layer thickness. Tensile and compressive strained In1-xGa xAs yP1-y /InP SQWs grown with the same structure exhibited different relaxation processes, even when the strain magnitude was the same. PLM images of highly compressive quantum wells exhibited a large number of dark lines corresponding to misfit dislocations as a result of the partial relaxation process in the well material. PLM images of similar tensile strained samples revealed only the presence of dark spots with no evidence of misfit dislocations. |
|
| dc.publisher |
Sociedade Brasileira de Física |
|
| dc.source |
Brazilian Journal of Physics |
|
| dc.title |
Strain and relaxation processes in In1-xGaxAsyP1-y/ InP single quantum wells grown by LP-MOVPE |
|