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| dc.creator |
Ribeiro E. |
|
| dc.creator |
Jäggi R. |
|
| dc.creator |
Heinzel T. |
|
| dc.creator |
Ensslin K. |
|
| dc.creator |
Medeiros-Ribeiro G. |
|
| dc.creator |
Petroff P. M. |
|
| dc.date |
1999 |
|
| dc.date.accessioned |
2013-05-29T23:30:25Z |
|
| dc.date.available |
2013-05-29T23:30:25Z |
|
| dc.date.issued |
2013-05-30 |
|
| dc.identifier |
http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400026 |
|
| dc.identifier |
http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=1999&volume=29&issue=4&spage=742 |
|
| dc.identifier.uri |
http://koha.mediu.edu.my:8181/jspui/handle/123456789/2769 |
|
| dc.description |
We report the observation of a metal-insulator transition in zero magnetic eld in a two dimensional electron gas under the influence of a plane of InAs self-assembled quantum dots located at 30 Å below the AlGaAs/GaAs heterointerface. The transition is observed as a function of temperature and electric field at B=0. A scaling analysis yields exponents similar to those obtained for Si MOSFET's . We suggest that the disorder introduced by the quantum dots plays a crucial role. |
|
| dc.publisher |
Sociedade Brasileira de Física |
|
| dc.source |
Brazilian Journal of Physics |
|
| dc.title |
Metal-insulator transition at B=0 in an AlGaAs/GaAs two-dimensional electron gas under the influence of InAs self-assembled quantum dots |
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