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Temperature dependence of the absorption coefficient in doped quantum wells

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dc.creator Baldan M.R.
dc.creator Serra R.M.
dc.creator Emmel P.D.
dc.creator Silva A. Ferreira da
dc.date 1999
dc.date.accessioned 2013-05-29T23:27:55Z
dc.date.available 2013-05-29T23:27:55Z
dc.date.issued 2013-05-30
dc.identifier http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400021
dc.identifier http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=1999&volume=29&issue=4&spage=723
dc.identifier.uri http://koha.mediu.edu.my:8181/jspui/handle/123456789/2753
dc.description In this work we present a calculation of the infrared optical absorption coefficient for a Ga1-xAl xAs quantum well (QW) as a function of donor impurity concentration, compensation and temperature. We treat this problem using a Self-Consistent Method (SC) calculation taking into account donors as major impurities. The Variational Method was used to obtain the ground state wave-function of an electron bound to a donor impurity in a QW. The results show a shift of energy in the absorption coefficient.
dc.publisher Sociedade Brasileira de Física
dc.source Brazilian Journal of Physics
dc.title Temperature dependence of the absorption coefficient in doped quantum wells


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