| dc.creator |
Chitta V. A. |
|
| dc.creator |
Maialle M. Z. |
|
| dc.creator |
Leão S. A. |
|
| dc.creator |
Degani M. H. |
|
| dc.date |
1999 |
|
| dc.date.accessioned |
2013-05-29T23:25:24Z |
|
| dc.date.available |
2013-05-29T23:25:24Z |
|
| dc.date.issued |
2013-05-30 |
|
| dc.identifier |
http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400016 |
|
| dc.identifier |
http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=1999&volume=29&issue=4&spage=702 |
|
| dc.identifier.uri |
http://koha.mediu.edu.my:8181/jspui/handle/123456789/2738 |
|
| dc.description |
We calculate the characteristic current-voltage curve of a tunneling device based on semimagnetic semiconductor materials. The device is a heterostructure with layers of Cd1<FONT FACE=Symbol>-</FONT> x Mn x Te in which the magnetic ions Mn2+ interact strongly with the conducting electrons via the s-d exchange interaction. Thermal fluctuations of Mn2+ magnetic moments cause spin-dependent electron scattering that modifies the characteristic current-voltage curve. Our calculation shows how this electron-ion scattering is expected to affect the spin dynamics in transport measurements. |
|
| dc.publisher |
Sociedade Brasileira de Física |
|
| dc.source |
Brazilian Journal of Physics |
|
| dc.title |
Spin-flip scattering contribution to resonant-tunneling current in semimagnetic semiconductor heterostructures |
|