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Interband magneto-absorption in narrow-gap semiconductor quantum wells

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dc.creator López-Richard V.
dc.creator Marques G. E.
dc.creator Trallero-Giner C.
dc.date 1999
dc.date.accessioned 2013-05-29T23:23:24Z
dc.date.available 2013-05-29T23:23:24Z
dc.date.issued 2013-05-30
dc.identifier http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400012
dc.identifier http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=1999&volume=29&issue=4&spage=679
dc.identifier.uri http://koha.mediu.edu.my:8181/jspui/handle/123456789/2727
dc.description A theoretical study of optical properties in narrow gap semiconductor quantum wells has been developed using an 8x8 Kane Hamiltonian. The interband transition selection rules have been obtained and a detailed description of the interband absorption using Voight and Faraday scattering configurations has been given. Interesting effects produced by the intraband admixture, such as spin-flip transitions, will be discussed. The complementation of measurements using different scattering configurations will be analyzed.
dc.publisher Sociedade Brasileira de Física
dc.source Brazilian Journal of Physics
dc.title Interband magneto-absorption in narrow-gap semiconductor quantum wells


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