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Cyclotron mass of electrons in GaN-AlxGa1-xN heterostructures

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dc.creator Oliveira Solemar Silva
dc.creator Souza Marcio Adriano R.
dc.creator Borges Antonio Newton
dc.creator Osório Francisco A. Pinto
dc.date 1999
dc.date.accessioned 2013-05-29T23:22:54Z
dc.date.available 2013-05-29T23:22:54Z
dc.date.issued 2013-05-30
dc.identifier http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400011
dc.identifier http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=1999&volume=29&issue=4&spage=675
dc.identifier.uri http://koha.mediu.edu.my:8181/jspui/handle/123456789/2723
dc.description The quasi-two-dimensional electron cyclotron mass in GaN-Al xGa1<FONT FACE=Symbol>-</FONT> xN heterostructures is theoretically calculated. The shifting in Landau Levels due to the electron Longitudinal Optical phonon interaction is calculated through the Second Order Improved Wigner Brillouin Perturbation Theory (IWBPT). Experimental results recently obtained for GaN heterojunction are well described by the theory. We have also investigated the e ects of the electronic density on the Cyclotron Resonance frequency.
dc.publisher Sociedade Brasileira de Física
dc.source Brazilian Journal of Physics
dc.title Cyclotron mass of electrons in GaN-AlxGa1-xN heterostructures


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