أعرض تسجيلة المادة بشكل مبسط
| dc.creator |
Capaz R. B. |
|
| dc.creator |
Assali L. V. C. |
|
| dc.creator |
Kimerling L. C. |
|
| dc.creator |
Cho K. |
|
| dc.creator |
Joannopoulos J. D. |
|
| dc.date |
1999 |
|
| dc.date.accessioned |
2013-05-29T23:18:24Z |
|
| dc.date.available |
2013-05-29T23:18:24Z |
|
| dc.date.issued |
2013-05-30 |
|
| dc.identifier |
http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400002 |
|
| dc.identifier |
http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=1999&volume=29&issue=4&spage=611 |
|
| dc.identifier.uri |
http://koha.mediu.edu.my:8181/jspui/handle/123456789/2696 |
|
| dc.description |
A novel microscopic mechanism for hydrogen-enhanced oxygen diffusion in p-doped silicon is proposed. A path for joint diffusion of O and H is obtained from an ab-initio molecular dynamics "kick" simulation. The migration pathway consists of a two-step mechanism, with a maximum energy of 1.46 eV. This path represents a 0.54 eV reduction in the static barrier when compared with the diffusion of isolated O in Si, in excellent agreement with experiments. |
|
| dc.publisher |
Sociedade Brasileira de Física |
|
| dc.source |
Brazilian Journal of Physics |
|
| dc.title |
"Ab initio" studies of hydrogen-enhanced oxygen diffusion in silicon |
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أعرض تسجيلة المادة بشكل مبسط